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1996-2000 [1999.10.__] Effect of high Temperature RTA on the Oxygen Precipitate Formation and COP dissolution

2019.04.02 20:12

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Effect of high Temperature RTA on the Oxygen Precipitate Formation and COP dissolution

ECS PV 99-18 ULSI Process Integration 196th Meeting of the Electrochemical Society

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번호	제목
42	[2001.08.15] Spectral analyses of the impact of nanotopography of silicon wafers on oxide chemical mechanical polishing
41	[2001.06.17] Defect reduction and improved gettering in CZ single-crystal silicon
40	[2001.04.01] Nature of surface and bulk defect induced by low dose oxygen implantation in separation by implanted oxygen wafers
39	[2001.04.01] Crystal originated particle induced oxide breakdown in Czochralski silicon wafer
38	[2000.12.01] CZ single-crystal silicon without grown-in defects
37	[2000.11.24] Nature of Surface defects in SOI wafers : SIMOX vs. Bonded SOI
36	[2000.11.21] Quality of Grown-in Defects Free CZ silicon Single Crystal, "Pure Silicon"
35	[2000.07.01] Growth Technology of CZ Silicon Single Crystals without Grown-in Defects
34	[2000.07.01] Advanced Czochralski Single Silicon Crystal Growth
33	[2000.01.01] Crystal originated particle induced isolation failure in Czochralski silicon wafers
»	[1999.10.__] Effect of high Temperature RTA on the Oxygen Precipitate Formation and COP dissolution
31	[1999.10.__] COP induced isolation Failure in CZ Si Wafers
30	[1999.09.01] Oxygen precipitation and secondary defects in silicon by high energy ion implantation and two-step annealing
29	[1999.07.12] Challenges of Material Properties for Advanced DRAM Devices
28	[1999.01.01] Numerical Simulations for HgCdTe related detectors

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