|
32 |
[1999.10.__] Effect of high Temperature RTA on the Oxygen Precipitate Formation and COP dissolution
|
|
31 |
[1999.10.__] COP induced isolation Failure in CZ Si Wafers
|
|
30 |
[1999.09.01] Oxygen precipitation and secondary defects in silicon by high energy ion implantation and two-step annealing
 |
|
29 |
[1999.07.12] Challenges of Material Properties for Advanced DRAM Devices
|
|
28 |
[1999.01.01] Numerical Simulations for HgCdTe related detectors
|
|
27 |
[1999.01.01] Novel electron mobility model for n-HgCdTe
|
|
26 |
[1999.01.01] Effect of crystal defects such as COPs, Large dislocations, and OSF-ring on device integrity degradation
|
|
25 |
[1998.__.__] COP induced oxide breakdown decorated by Cu in CZ Si
|
|
24 |
[1998.__.__] Challenge of Material Properties for 300mm Wafers
|
|
23 |
[1998.09.28] Wafer Requirements : Memory Devices SEMI SILICON WAFER SYMPOSIUM
|
|
22 |
[1997.__.__] Effect of Crystal Defects on Device Characteristics
|
|
21 |
[1997.__.__] 300mm Wafer Technology
|
|
20 |
[1997.10.08] Ni/3C-SiC 계면의 Ohmic 특성
|
|
19 |
[1996.__.__] Effect of Crystal Characteristics on the DRAM Device Yield
|
|
18 |
[1996.__.__] DRAM Wafer Qualification Issues : Oxide integrity vs. D-Defects, Oxygen Precipitates and High Temperature Annealing
|
