27 |
[1999.01.01] Novel electron mobility model for n-HgCdTe
|
26 |
[1999.01.01] Effect of crystal defects such as COPs, Large dislocations, and OSF-ring on device integrity degradation
|
25 |
[1998.__.__] COP induced oxide breakdown decorated by Cu in CZ Si
|
24 |
[1998.__.__] Challenge of Material Properties for 300mm Wafers
|
23 |
[1998.09.28] Wafer Requirements : Memory Devices SEMI SILICON WAFER SYMPOSIUM
|
22 |
[1997.__.__] Effect of Crystal Defects on Device Characteristics
|
21 |
[1997.__.__] 300mm Wafer Technology
|
» |
[1997.10.08] Ni/3C-SiC 계면의 Ohmic 특성
|
19 |
[1996.__.__] Effect of Crystal Characteristics on the DRAM Device Yield
|
18 |
[1996.__.__] DRAM Wafer Qualification Issues : Oxide integrity vs. D-Defects, Oxygen Precipitates and High Temperature Annealing
|
17 |
[1996.11.__] Wafer Engineering for DRAM Devices
|
16 |
[1996.11.25] Effect of Crystal Defects on Device Characteristics
|
15 |
[1995.__.__] Observation of Structural, Electrical, and Chemical Nature on Multi-ring Wafer
|
14 |
[1995.__.__] Nature of D-defect in CZ Silicon : D-defect Dissolution and D-Defect Related T.D.D.B
|
13 |
[1995.__.__] Gate Oxide Integrity in DRAM Devices : The Influence of Substrate D-defects
|