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336 |
[2020.06.01] Highly Selective Polishing Rate Between a Tungsten Film and a Silicon-Dioxide Film by Using a Malic-Acid Selectivity Agent in Tungsten-Film Chemical-Mechanical Planarization
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335 |
[2020.05.18] Interfacial Chemical and Mechanical Reactions between Tungsten-Film and Nano-Scale Colloidal Zirconia Abrasives for Chemical-Mechanical-Planarization
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334 |
[2020.05.05] Facile synthesis of cobalt–nickel sulfide thin film as a promising counter electrode for triiodide reduction in dye-sensitized solar cells
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333 |
[2020.04.30] Double MgO-Based Perpendicular Magnetic Tunnel Junction for Artificial Neuron
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332 |
[2020.01.08] Dislocation sink annihilating threading dislocations in strain-relaxed Si1−xGex layer
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331 |
[2019.12.01] Plasma Etching of SiO2 with CF3I Gas in Plasma-Enhanced Chemical Vapor Deposition Chamber for In-Situ Cleaning
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330 |
[2019.12.01] Enhanced Thermal Stability in Magnetic Random-Access Memory Cells With Free Layer Composed of Multilayer Co/Pt Coupled to Co2Fe6B2 With Interfacial Perpendicular Magnetic Anisotropy
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329 |
[2019.10.23] Surface-tensile-stress induced polishing-voids suppression via H2O2 oxidizer effect in cross-point phase-change-memory-cells
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328 |
[2019.08.15] Double Pinned Perpendicular-Magnetic-Tunnel-Junction Spin-Valve Providing Multi-level Resistance States
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327 |
[2019.05.01] Surface-tensile-stress induced polishing-voids in cross-point phase-change-memory cells: corrosion mechanism and solution
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326 |
[2019.02.10] Continuous Separation of Circulating Tumor Cells from Whole Blood Using a Slanted Weir Microfluidic Device
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325 |
[2018.08.27] Super Ultra-High Resolution Liquid-Crystal-Display Using Perovskite Quantum-Dot Functional Color-Filters
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324 |
[2018.08.01] Design of Two-terminal-electrode Vertical Thyristors as Cross-point Memory
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323 |
[2018.07.24] A Two-Terminal Perpendicular Spin-Transfer-Torque Based Artificial Neuron
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322 |
[2018.07.11] Correlating nano black spots and optical stability in mixed halide perovskite quantum dots
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