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317 |
[2018.01.07] Nanoscale CuO Solid-electrolyte-based Conductive-bridging, Random-access Memory Cell with a TiN Liner
 |
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316 |
[2017.12.07] Fluorene-Based Conjugated Polymers Containing Acetylene Linkages for Photovoltaics
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315 |
[2017.10.04] (Invited) Design and Challenging Issues of Core/Shell Quantum Dots for Enhancing Power-Conversion-Efficiency in Si Solar-Cells
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314 |
[2017.09.19] Highly Enhanced TMR Ratio and Delta for Double MgO-based p-MTJ Spin-Valves with Top Co2Fe6B2 Free Layer by Nanoscale-thick Iron Diffusion barrier
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313 |
[2017.08.16] Improved Etch Characteristics of Magnetic Tunneling Junction Materials by Using Helium
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312 |
[2017.06.08] Electro-Forming and Electro-Breaking of Nanoscale Ag Filaments for Conductive-Bridging Random-Access Memory Cell using Ag-Doped Polymer-Electrolyte between Pt Electrodes
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311 |
[2017.03.14] Si CMOS Image-Sensors Designed With Hydrogen-Ion Implantation Induced Nanocavities for Enhancing Output Voltage Sensing Margin via Proximity Gettering
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310 |
[2017.01.22] Enhanced Efficiency and Current Density of Solar Cells via Energy-down-shift Having Energy-tuning-effect of Highly UV-light-harvesting Mn2+-doped Quantum Dots
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309 |
[2016.12.08] Dependency of Tunneling-Magnetoresistance Ratio on Nanoscale Spacer Thickness and Material for Double MgO Based Perpendicular-Magnetic-Tunneling-Junction
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308 |
[2016.11.22] Design of Hydrogen-ion-implantation Induced Gettering for C-MOS Image Sensor
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307 |
[2016.11.04] Perpendicular magnetic tunnel junction (p-MTJ) spin-valves designed with a top Co2Fe6B2 free layer and a nanoscale-thick tungsten bridging and capping layer
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306 |
[2016.11.03] Effect of double MgO tunneling barrier on thermal stability and TMR ratio for perpendicular MTJ spin-valve with tungsten layers
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305 |
[2016.10.31] Dependency of tunneling magnetoresistance ratio on Pt seed-layer thickness for double MgO perpendicular magnetic tunneling junction spin-valves with a top Co2Fe6B2 free layer ex-situ annealed at 400 C
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304 |
[2016.10.03] Development of Silicon Substrate for Advanced Multi-Chip Packaging Process with Enhanced Gettering Ability
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303 |
[2016.09.27] Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Junction Spin Valve Between Top and Bottom Co2Fe6B2 Free Layer Structure
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