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[2022.05.15] 첨단 반도체 소재/소자 개발 연구소 스승의 날 행사








[210130] "한국 반도체, 기술 초격차로 중국 따돌리고 대만에 맞서야"

번호 제목
287 [2014.12.08] Impact of Tungsten Contamination on the Sensing Margin of a CMOS-image-sensor Cell file
286 [2014.12.01] Etch Characteristics of Magnetic Tunnel Junction Materials Using Bias Pulsing in the CH4/N2O Inductively Coupled Plasma file
285 [2014.12.01] Epitaxial growth of three-dimensionally mesostructured single crystalline Cu2O via templated electrodeposition file
284 [2014.12.01] Effect of RF Pulsing Biasing on the Etching of Magnetic Tunnel Junction Materials Using CH3OH file
283 [2014.11.10] Low-cost and Flexible Ultra-thin Silicon Solar Cell Implemented with Energy-down-shift via Cd0.5Zn0.5S/ZnS Core/shell Quantum Dots file
282 [2014.10.23] High Stability Transparent Amorphous Oxide TFT with a Silicon-doped Back-channel Layer file
281 [2014.10.09] Flexible Conductive-Bridging Random-Access-Memory Cell Vertically Stacked with Top Ag Electrode, PEO, PVK, and Bottom Pt Electrode file
280 [2014.08.29] Effect of nanohole structure on pyramid textured surface on photo-voltaic performance of silicon solar cell file
279 [2014.08.11] Effect of Core Quantum-dots Size on Power-conversion-efficiency for Silicon Solar-cells Implementing Energy-down-shift using CdSe/ZnS Core/Shell Quantum Dots file
278 [2014.08.07] Interface characterization of nitrogen plasmatreated gate oxide film formed by RTP technology file
277 [2014.07.15] Dependency of anti-ferro-magnetic coupling strength on Ru spacer thickness of [Co/Pd]n-synthetic-anti-ferro-magnetic layer in perpendicular magnetic-tunnel-junctions fabricated on 12-inch TiN electrode wafer file
276 [2014.06.30] The energy-down-shift effect of Cd0.5Zn0.5S–ZnS core–shell quantum dots on power-conversion-efficiency enhancement in silicon solar cells file
275 [2014.06.17] Dielectric function of Si1-xGex films grown on silicon-on-insulator substrates file
274 [2014.06.02] High-Power Conversion Efficiency of Photovoltaic Cells Fabricated with a Small-molecular and Polymer Donating Blend Layer file
273 [2014.04.01] Conductive-bridging Random-access Memory Cell Fabricated with a Top Ag Electrode, a Polyethylene Oxide Layer, and a Bottom Pt Electrode file
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