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공지 Update 진행중
56 [2002.07.01] Spectral Analysis Method for Nanotopography Impact on Pad and Removal Depth Dependency in Oxide CMP file
55 [2002.07.01] Nanotopography Effect of Improved Single-Side-Polished Wafer on Oxide CMP file
54 [2002.07.01] Abrasive and Surfactant Effects on Ceria Slurry for Chemical Mechanical Polishing in Shallow Trench Isolation
53 [2002.05.11] Characterization of surface and bulk defects for SOI wafer
52 [2002.04.15] The nanotopography effect of improved single-side-polished wafer on oxide chemical mechanical polishing file
51 [2002.01.15] Spectral analyses on pad dependency of nanotopography impact on oxide chemical mechanical polishing file
50 [2002.01.15] Effects of film type and nanotopography of wafers on oxide CMP characteristics file
49 [2001.12.18] The Effect of Si Dissolution on the Stability of Silica Particles and Its Influence on Chemical Mechanical Polishing for Interlayer Dielectrics file
48 [2001.12.18] Modification of Electrokinetic Behavior of CeO2 Abrasive Particles in Chemical Mechanical Polishing for shallow Trench Isolation file
47 [2001.12.18] Effects of pattern density on CMP removal rate and uniformity file
46 [2001.12.18] Effect of gas ambient at high temperature rapid thermal annealing on oxygen precipitate formation and crystal originated particle dissolution file
45 [2001.12.18] Effect of Film Type and Wafer Shape on Oxide CMP Characteristics file
44 [2001.11.28] Defects in 300mm crystal and their control
43 [2001.08.15] Spectral analyses of the impact of nanotopography of silicon wafers on oxide chemical mechanical polishing
42 [2001.06.17] Defect reduction and improved gettering in CZ single-crystal silicon