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291 |
[2015.04.21] Influence of face-centered-cubic texturing of Co2Fe6B2 pinned layer on tunneling magnetoresistance ratio decrease in Co2Fe6B2/MgO-based p-MTJ spin valves stacked with a [Co/Pd]n-SyAF layer
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290 |
[2015.04.15] The dependency of tunnel magnetoresistance ratio on nanoscale thicknesses of Co2Fe6B2 free and pinned layers for Co2Fe6B2/MgO-based perpendicular-magnetic-tunnel-junctions
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289 |
[2015.04.15] Dependency of tunneling magneto-resistance on Fe insertion-layer thickness in Co2Fe6B2/MgO-based magnetic tunneling junctions
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288 |
[2015.01.10] Triboelectric energy harvester based on wearable textile platforms employing various surface morphologies
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287 |
[2014.12.08] Impact of Tungsten Contamination on the Sensing Margin of a CMOS-image-sensor Cell
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286 |
[2014.12.01] Etch Characteristics of Magnetic Tunnel Junction Materials Using Bias Pulsing in the CH4/N2O Inductively Coupled Plasma
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285 |
[2014.12.01] Epitaxial growth of three-dimensionally mesostructured single crystalline Cu2O via templated electrodeposition
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284 |
[2014.12.01] Effect of RF Pulsing Biasing on the Etching of Magnetic Tunnel Junction Materials Using CH3OH
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283 |
[2014.11.10] Low-cost and Flexible Ultra-thin Silicon Solar Cell Implemented with Energy-down-shift via Cd0.5Zn0.5S/ZnS Core/shell Quantum Dots
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282 |
[2014.10.23] High Stability Transparent Amorphous Oxide TFT with a Silicon-doped Back-channel Layer
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281 |
[2014.10.09] Flexible Conductive-Bridging Random-Access-Memory Cell Vertically Stacked with Top Ag Electrode, PEO, PVK, and Bottom Pt Electrode
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280 |
[2014.08.29] Effect of nanohole structure on pyramid textured surface on photo-voltaic performance of silicon solar cell
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279 |
[2014.08.11] Effect of Core Quantum-dots Size on Power-conversion-efficiency for Silicon Solar-cells Implementing Energy-down-shift using CdSe/ZnS Core/Shell Quantum Dots
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278 |
[2014.08.07] Interface characterization of nitrogen plasmatreated gate oxide film formed by RTP technology
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277 |
[2014.07.15] Dependency of anti-ferro-magnetic coupling strength on Ru spacer thickness of [Co/Pd]n-synthetic-anti-ferro-magnetic layer in perpendicular magnetic-tunnel-junctions fabricated on 12-inch TiN electrode wafer
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