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273 |
[2014.04.01] Conductive-bridging Random-access Memory Cell Fabricated with a Top Ag Electrode, a Polyethylene Oxide Layer, and a Bottom Pt Electrode
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272 |
[2014.02.28] Characterization of nano-scale strained silicon-on-insulator substrates by multiwavelength high resolution micro-raman and optical reflectance
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271 |
[2013.10.31] Oxygen ion drift-driven dual bipolar hysteresis curves in a single Pt/Ta2O5-x/TiOxNy framework
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270 |
[2013.10.16] Correlation of the Structural Properties of a Pt Seed Layer with the Perpendicular Magnetic Anisotropy Features of Full Heusler-based Co2FeAl/MgO/Co2Fe6B2 Junctions via a 12-inch scale Si Wafer Process
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269 |
[2013.10.01] Environmentally Clean Slurry using Nano-TiO2-abrasive Mixed with Oxidizer H2O2 for Ruthenium-film Chemical Mechanical Planarization
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268 |
[2013.10.01] Effect of Iron(III) Nitrate Concentration on Tungsten Chemical-Mechanical-Planarization Performance
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267 |
[2013.08.21] Solution-processed Ag-doped ZnO Nanowires Grown on Flexible Polyester for Nanogenerator Applications
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266 |
[2013.07.01] Effects of Metallic Contaminant Type and Concentration on Photovoltaic Performance Degradation of p-type Silicon Solar Cells
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265 |
[2013.06.06] Biological Synapse Behavior of Nanoparticle Organic Memory Field Effect Transistor Fabricated by Curing
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264 |
[2013.05.30] Effects of Pt capping layer on perpendicular magnet anisotropy in pseudospin valves of Ta/CoFeB/MgO/CoFeB/Pt magnetic-tunneling junctions
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263 |
[2013.05.17] Effect of β-cyclodextrin and Citric Acid on Chemical Mechanical Polishing of Polycrystalline Ge2Sb2Te5 in H2O2 Containing Slurry
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262 |
[2013.05.01] Nonvolatile Polymer Memory-Cell Embedded with Ni Nanocrystals Surrounded by NiO in Polystyrene
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261 |
[2013.03.22] Solar Cell Implemented with Silicon Nanowires on Pyramid-texture Silicon Surface
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260 |
[2013.02.22] Capacitor-less memory cell fabricated on nano-scale strained Si on a relaxed SiGe layer-on-insulator
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259 |
[2013.02.15] Effective Multi-step Ge Condensation Process Using Intermittent SiO2 Strip to Obtain a High-Ge Concentration and a Thick Ge-on-insulator (GeOI) Substrate for p-MOSFET
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