227 |
[2010.12.20] Micro Defect Size in Si Single Crystal Grown by Czochralski Method
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226 |
[2010.12.15] Four-level Nonvolatile Small-molecule Memory-Cell Embedded with Fe Nanocrystals Surrounded with FeO and Fe2O3 Tunneling Barrier
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225 |
[2010.09.24] Fabricated nonvolatile memory with Ag nano-crystals embedded in PVK
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224 |
[2010.09.23] Potassium Permanganate as Oxidizer in Alkaline Slurry for Chemical Mechanical Planarization of Nitrogen-doped Polycrystalline Ge2Sb2Te5 Film
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223 |
[2010.08.10] Titanium Oxide Thin Films Prepared by Plasma Enhanced Atomic Layer Deposition Using Remote Electron Cyclotron Resonance Plasma for Organic Devices Passivation
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222 |
[2010.06.01] Device Performance and Polymer Layer Morphology in Polymer Bistable Device (PBD): The Control of Physicochemical Properties of Solvent
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221 |
[2010.05.14] Effect of NiOx thin layer fabricated by oxygen-plasma treatment on polymer photovoltaic cell
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220 |
[2010.04.27] Dependence of SOI Properties on Memory Characteristics in a Cap-less Memory Cell
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219 |
[2010.04.23] Capacitor-less memory-cell fabricated on nanoscale unstrained Si layer on strained SiGe layer-on-insulator
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218 |
[2010.04.20] Multiselectivity Chemical Mechanical Polishing for NAND Flash Memories beyond 32 nm
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217 |
[2010.03.23] Optimal Channel Ion Implantation for High Memory Margin of Capacitor-Less Memory Cell Fabricated on Fully Depleted Silicon-on-Insulator
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216 |
[2010.03.23] Effects of Bulk Microdefects and Metallic Impurities on p-n Junction Leakage Currents in Silicon
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215 |
[2010.03.08] Role of Hydrogen Peroxide in Alkaline Slurry on the Polishing Rate of Polycrystalline Ge2Sb2Te5 Film in Chemical Mechanical Polishing
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214 |
[2010.03.04] Effect of Hydroxyethyl Cellulose Concentration on Surface Qualities of Silicon Wafer after Touch Polishing Process
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» |
[2010.03.01] Guest Editorial
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