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377 |
[2024.10.21] Unveiling the Resistive Switching Mechanism and Low Current Dynamics of Ru-based Hybrid Synaptic Memristors
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376 |
[2024.08.08] Ultraviolet CMOS image sensor for environment analysis via energy-down-shift mechanism of blue-light emitting quantum dots
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375 |
[2024.06.21] Hybrid Organic–Si C-MOSFET Image Sensor Designed with Blue-, Green-, and Red-Sensitive Organic Photodiodes on Si C-MOSFET-Based Photo Signal Sensor Circuit
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374 |
[2024.04.15] Hardware Implementation of a Fully Functional Stochastic p-STT Neuron for Probabilistic Computing
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373 |
[2023.11.22] [Co/NM/Pt]n-based seedless synthetic anti-ferromagnetic layer design for preventing MgO crystallinity degradation from Pt diffusion
|
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372 |
[2023.11.01] Synaptic variation reduction via embedding Au nanocrystals in resistive switching layer and bottom electrode interface for CuTe/CuO/TiN-stacked synaptic device
 |
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371 |
[2023.11.01] Extremely high selective Si1−xGex-film wet etchant generating highly dissolved oxygen via peracetic acid oxidant for lateral gate-all-around FETs with a logic node of less than 3-nm
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370 |
[2023.01.18] Fumed Silica-Based Ultra-High-Purity Synthetic Quartz Powder via Sol–Gel Process for Advanced Semiconductor Process beyond Design Rule of 3 nm
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369 |
[2022.12.13] Simple Ge/Si bilayer junction-based doping-less tunnel field-effect transistor
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368 |
[2022.11.14] Chemical mechanical planarization mechanism of epitaxially grown Ge-film for sequential integrating 3D-structured transistor cells
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367 |
[2022.11.04] Silicon Wafer CMP Slurry Using a Hydrolysis Reaction Accelerator with an Amine Functional Group Remarkably Enhances Polishing Rate
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366 |
[2022.10.26] Design of Ag–Ga–S2-xSex-based eco-friendly core/shell quantum dots for narrow full-width at half-maximum using noble ZnGa2S4 shell material
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365 |
[2022.10.13] Effective methods for eliminating (NH4)2SiF6 powders generated on Si3N4 wafers processed by HF VPD
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364 |
[2022.08.18] Super-Linear-Threshold-Switching Selector with Multiple Jar-Shaped Cu-Filaments in the Amorphous Ge3Se7 Resistive Switching Layer in a Cross-Point Synaptic Memristor Array
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363 |
[2022.06.07] Enhancement of electrical characteristics and reliability of CuGeS2/GeS2-based super-linear-threshold-switching device by insertion of TiN liner
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