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세리아 슬러리용 Central Chemical Supplying (CCS) 시스템의 필터 크기가 Light Point Defects(LPDs)에 미치는 영향 (Filter Size Effect of Central Chemical Supplying (CCS) system for Ceria Slurry on Light Point Defects (LPDs))

 

한국산학연논문집 (JOURNAL OF KASBIR)

번호 제목
381 [2025.08.09] Effects of Hydrolysis Reaction and Abrasive Drag Force Accelerator on Enhancing Si-Wafer Polishing Rate and Improving Si-Wafer Surface Roughness
380 [2025.01.22] The Chemical Deformation of a Thermally Cured Polyimide Film Surface into Neutral 1,2,4,5-Benzentetracarbonyliron and 4,4′-Oxydianiline to Remarkably Enhance the Chemical–Mechanical Planarization Polishing Rate file
379 [2025.01.16] Optimization of growth conditions for high-Ge-content Si1-xGex epitaxial layers using ultra-high-vacuum CVD for high-performance semiconductor applications
378 [2024.12.19] Highly reliable forming-free conductive-bridge random access memory via nitrogen-doped GeSe resistive switching layer
377 [2024.10.21] Unveiling the Resistive Switching Mechanism and Low Current Dynamics of Ru-based Hybrid Synaptic Memristors
376 [2024.08.08] Ultraviolet CMOS image sensor for environment analysis via energy-down-shift mechanism of blue-light emitting quantum dots
375 [2024.06.21] Hybrid Organic–Si C-MOSFET Image Sensor Designed with Blue-, Green-, and Red-Sensitive Organic Photodiodes on Si C-MOSFET-Based Photo Signal Sensor Circuit
374 [2024.04.15] Hardware Implementation of a Fully Functional Stochastic p-STT Neuron for Probabilistic Computing
373 [2023.11.22] [Co/NM/Pt]n-based seedless synthetic anti-ferromagnetic layer design for preventing MgO crystallinity degradation from Pt diffusion
372 [2023.11.01] Synaptic variation reduction via embedding Au nanocrystals in resistive switching layer and bottom electrode interface for CuTe/CuO/TiN-stacked synaptic device file
371 [2023.11.01] Extremely high selective Si1−xGex-film wet etchant generating highly dissolved oxygen via peracetic acid oxidant for lateral gate-all-around FETs with a logic node of less than 3-nm
370 [2023.01.18] Fumed Silica-Based Ultra-High-Purity Synthetic Quartz Powder via Sol–Gel Process for Advanced Semiconductor Process beyond Design Rule of 3 nm file
369 [2022.12.13] Simple Ge/Si bilayer junction-based doping-less tunnel field-effect transistor file
368 [2022.11.14] Chemical mechanical planarization mechanism of epitaxially grown Ge-film for sequential integrating 3D-structured transistor cells file
367 [2022.11.04] Silicon Wafer CMP Slurry Using a Hydrolysis Reaction Accelerator with an Amine Functional Group Remarkably Enhances Polishing Rate file