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세리아 슬러리용 Central Chemical Supplying (CCS) 시스템의 필터 크기가 Light Point Defects(LPDs)에 미치는 영향 (Filter Size Effect of Central Chemical Supplying (CCS) system for Ceria Slurry on Light Point Defects (LPDs))

 

한국산학연논문집 (JOURNAL OF KASBIR)

번호 제목
공지 Update 진행중
114 [2004.12.24] STI-CMP용 세리아 슬러리 공급시스템에서 거대입자와 필터 크기가 Light Point Defects(LPDs)에 미치는 영향 (Effects of Large Particles and Filter Size in Central Chemical Supplying (CCS) System for STI-CMP on Light Point Defects (LPDs)) file
» [2004.12.01] 세리아 슬러리용 Central Chemical Supplying (CCS) 시스템의 필터 크기가 Light Point Defects(LPDs)에 미치는 영향 (Filter Size Effect of Central Chemical Supplying (CCS) system for Ceria Slurry on Light Point Defects (LPDs))
112 [2004.11.__] Characteristics of Ru barrier layer in Mo/Ru/Si multilayer for EUV reflector applications file
111 [2004.11.24] Design of Extreme Proximity Gettering
110 [2004.11.01] Influence of physical characteristics of ceria particles on polishing rate of chemical mechanical planarization for shallow trench isolation file
109 [2004.11.01] A reverse selectivity ceria slurry for the damascene gate chemical mechanical planarization process file
108 [2004.10.__] Extended defects and pile-up of interstitial oxygen in silicon wafer due to MeV-level nitrogen ion implantation file
107 [2004.10.__] Effect of Ge mole fraction and Strained Si Thickness on Electron Mobility of FD n-MOSFET Fabricated on Strained Si/Relaxed SiGe/SiO2/Si file
106 [2004.10.__] Determination of the distribution and morphology of silicon islands in the buried oxide layer of SOI wafers by using a focused ion beam and transmission electron microscope file
105 [2004.10.31] 나노 스케일 C-MOSFET에 적용되는 완충된 SiGe층 위에 성장된 나노스케일 변위 실리콘층을 가지는 SOI C-MOSFET file
104 [2004.10.28] Effect of Strained Si Thickness on Electron Scattering Rate in n-MOSFET Fabricated on Strained Si/SiGe/SiO2/Si
103 [2004.10.28] Design and Implementation of the Mobile Disaster Management Application System Based on PDA
102 [2004.10.28] CDS Reliability Test of Contents Aggregater for VOD/NVOD Service.
101 [2004.09.__] Proximity gettering process for 300-mm silicon wafers
100 [2004.09.__] Effect of nano-scale strained Si layer grown on SiGe-on-insulator structure on MOSFET drain current improvement