LayerPopupAddon
1일간 열지않기
메뉴 건너뛰기
ASMDDC
People
Professor
Members
Alumni
Research
STT-MRAM
Spin Neuron
3D ReRAM
ReRAM Based Synaptic Device
CMP Slurry
SiGe Based FinFET
CMOS Image Sensor
QD UV Camera
Thyristor based 1T-DRAM
IZGO FET
Display for Quantum-dots
Solar Cell with Quantum-dots
GaN Substrate
Sapphire Growth
Si Wafer Evaluation for Solar Cell
Publications +
Papers
Articles
Fab. Center
Equipment
전체
Year
2016-2020
2011-2015
2006-2010
2001-2005
2021-
1996-2000
1990-1995
2001-2005
[2005.09.01] 차세대 비휘발성 메모리 소자
2019.06.26 15:46
Administrator
조회 수:270
박재근
차세대 비휘발성 메모리 소자
물리학과 첨단기술 9월호 (2005) 2
댓글
0
목록
번호
제목
372
[2023.11.01] Synaptic variation reduction via embedding Au nanocrystals in resistive switching layer and bottom electrode interface for CuTe/CuO/TiN-stacked synaptic device
371
[2023.11.01] Extremely high selective Si1−xGex-film wet etchant generating highly dissolved oxygen via peracetic acid oxidant for lateral gate-all-around FETs with a logic node of less than 3-nm
370
[2023.01.18] Fumed Silica-Based Ultra-High-Purity Synthetic Quartz Powder via Sol–Gel Process for Advanced Semiconductor Process beyond Design Rule of 3 nm
369
[2022.12.13] Simple Ge/Si bilayer junction-based doping-less tunnel field-effect transistor
368
[2022.11.14] Chemical mechanical planarization mechanism of epitaxially grown Ge-film for sequential integrating 3D-structured transistor cells
367
[2022.11.04] Silicon Wafer CMP Slurry Using a Hydrolysis Reaction Accelerator with an Amine Functional Group Remarkably Enhances Polishing Rate
366
[2022.10.26] Design of Ag–Ga–S2-xSex-based eco-friendly core/shell quantum dots for narrow full-width at half-maximum using noble ZnGa2S4 shell material
365
[2022.10.13] Effective methods for eliminating (NH4)2SiF6 powders generated on Si3N4 wafers processed by HF VPD
364
[2022.08.18] Super-Linear-Threshold-Switching Selector with Multiple Jar-Shaped Cu-Filaments in the Amorphous Ge3Se7 Resistive Switching Layer in a Cross-Point Synaptic Memristor Array
363
[2022.06.07] Enhancement of electrical characteristics and reliability of CuGeS2/GeS2-based super-linear-threshold-switching device by insertion of TiN liner
362
[2022.03.01] Surface Transformation of Spin-on-Carbon Film via Forming Carbon Iron Complex for Remarkably Enhanced Polishing Rate
361
[2022.03.01] Polymer link breakage of polyimide-film-surface using hydrolysis reaction accelerator for enhancing chemical–mechanical-planarization polishing-rate
360
[2022.02.25] Real-Time Correlation Detection via Online Learning of a Spiking Neural Network with a Conductive-Bridge Neuron
359
[2022.01.18] Layer-Dependent Effects of Interfacial Phase-Change Memory for an Artificial Synapse
358
[2022.01.17] Bi-Stable Resistance Generation Mechanism for Oxygenated Amorphous Carbon-Based Resistive Random-Access Memory